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question : find intrinsic carrier concentration at T=200k for silicon (in cm^-3).
Answer is attached.In that why is that (200/300)^3 is added there.my only hope is this forum.Thank you
question : find intrinsic carrier concentration at T=200k for silicon (in cm^-3).
Answer is attached.In that why is that (200/300)^3 is added there.my only hope is this forum.Thank you
Nc and Nv have temperature parameters that are raised to the 3/2 power. If the temperature ratios are moved outside the exponent brackets, then the temperature ratios have to be raised to the third power to compensate for the move.
Why we need to move temperature outside the exponential.i have solved this in my way say weather it is right or wrong with explanation .Thank you