I read in sci.electronics.design that Winfield Hill
about 'Are small signal npn transistors really so different from one
another?', on Sat, 20 Dec 2003:
Paul Burridge wrote...
Indeed. In general for high-frequency amplifiers you want
to use Vce = 2V or more to reduce Ccb. Furthermore the
last stage needs more room for output-voltage swing.
I'll fight the big guy!
Win, I'm very surprised you didn't point out that wasting nearly half
the Vcc in drop across the emitter resistor can't be right in anybody's
book, especially yours.
Ve = 1 to 1.5 V is ample to make Ic reasonably independent of beta,
especially since in an RF amplifier, the base bias chain can be quite
low resistance.
It's also an interesting trick to set the first stage current at several
milliamps, because that stage is fed from a low impedance, so a low
input impedance isn't significant. For the succeeding stages, you need a
balancing act between input impedance (RL is low compared with the
collector resistor to get minimum shunting effect) and stage gain (RL
not so low that gmRL is reduced too much).