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Channel Length Modulation

Hi friends,

I'm studying channel length modulation (CLM) in MOSFET. Simply
speaking, when a n-channel transistor is in saturation region and Vds
is increased with fixed Vgs, Id increases linearly due to CLM. This is
because the depletion region depth of the reverse-bias diode across the
drain and the substrate gets larger and larger with increasing Vds,
causing shorter effective length.

My question is: As the effective length of transistor decreases, would
it introduce velocity saturation which decreases Id and in turn makes
Id constant with increasing Vds??

Hope it arouses your interest ~