Hello,
I have been experimenting with emitter bias feedback method for biasing a transistor. Please locate in the following link:
When I did the circuit and calculated it with the typical values as shown in attachment T2-EBF-A.png (left side), the Ie calculated value was 0.101 ma but when measured with the actual component values, Ie was1.31ma.
I redid this circuit calculations taking into account REE as shown in T2-EBF-B.png and the same discrepancy occured.
Is it normal to have such a difference between theoretical and practical measurements?
Any help / feedback is very appreciated!
Thank you!
regards
r
I have been experimenting with emitter bias feedback method for biasing a transistor. Please locate in the following link:
When I did the circuit and calculated it with the typical values as shown in attachment T2-EBF-A.png (left side), the Ie calculated value was 0.101 ma but when measured with the actual component values, Ie was1.31ma.
I redid this circuit calculations taking into account REE as shown in T2-EBF-B.png and the same discrepancy occured.
Is it normal to have such a difference between theoretical and practical measurements?
Any help / feedback is very appreciated!
Thank you!
regards
r
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