is there any way that you can send me a high res picture of image 8 because i cant quite make out the numbers next to the components and my internet wont let me through to the site, when I clic the image it says,
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i dont get how to make the gate voltages high enough to turn on the fets because if I'm putting 80volts through the highside fet then when closed the source will be 80 and with a gate to source threshold is 20v then I need a voltage of 100 at the gate, now if the boostrap provides the gate with a high enough voltage and drops 5% of its charge and then switches back to charging when the low side fet is on, theres something there that I am missing and so i thing the bootstrap cap has a use in keeping the vgs theshold of the high side fet kindof make sence but then where on earth do you get the 100volts to open the lowside fet gate, confused and struggling, I might need it re-wording because I can't make sense of it as of yet, thank you for your help.
I now understand that when you're driving a low-side MOSFET (source connected to ground), the gate voltage only needs to be elevated with respect to the source pin. So if you apply a Vgs of 10V, the gate is at 10V, and the source is at ground. This is sufficient to turn on the MOSFET fully. high side For a high-side MOSFET (source NOT connected to ground), the situation is different. If you have a load voltage of 55V and you wish to turn the high-side MOSFET on fully, you would indeed need to elevate the gate 10V above the source (so if the source is at 55V due to load, the gate needs to be driven to around 65V relative to ground). That's why high-side drivers like the IR2110 use a bootstrap circuit to generate this elevated gate voltage. I am also using 55volt now instead of 77 because in a square wave as opposed to sinosoidal the rms equals peak voltage now what i want to do is make use of IRF640 mosfets because they switch fast enough for 50hz now im trying to choose a capacitor diode and mybe i need a bootstrap resistor too, any additional thoughts welcomed!
i think 10uf at 100v should do it what do you think about this because I consulted another source but in your pdf document it reccomends 47uf - 68uf what are your thoughts
please, I need a high res image of the picture in image 8 of the pdf because the actual picture is a link in the pdf and my internet connection won't allow me to view the page
so i found this on another thread
"Sorry guys i forgot to tell you that i didnt connect the source of the low side mosfet in to ground ... but i connect it to the negative voltage (-310V)
So the output is alternating current isnt it ?
*see the red circle"
does this mean that i can create the alternating current with just one half bridge ir2110, I want to understand this
Did Not Connect: Potential Security Issue
Firefox detected a potential security threat and did not continue to 4.bp.blogspot.com because this web site requires a secure connection.
i dont get how to make the gate voltages high enough to turn on the fets because if I'm putting 80volts through the highside fet then when closed the source will be 80 and with a gate to source threshold is 20v then I need a voltage of 100 at the gate, now if the boostrap provides the gate with a high enough voltage and drops 5% of its charge and then switches back to charging when the low side fet is on, theres something there that I am missing and so i thing the bootstrap cap has a use in keeping the vgs theshold of the high side fet kindof make sence but then where on earth do you get the 100volts to open the lowside fet gate, confused and struggling, I might need it re-wording because I can't make sense of it as of yet, thank you for your help.
I now understand that when you're driving a low-side MOSFET (source connected to ground), the gate voltage only needs to be elevated with respect to the source pin. So if you apply a Vgs of 10V, the gate is at 10V, and the source is at ground. This is sufficient to turn on the MOSFET fully. high side For a high-side MOSFET (source NOT connected to ground), the situation is different. If you have a load voltage of 55V and you wish to turn the high-side MOSFET on fully, you would indeed need to elevate the gate 10V above the source (so if the source is at 55V due to load, the gate needs to be driven to around 65V relative to ground). That's why high-side drivers like the IR2110 use a bootstrap circuit to generate this elevated gate voltage. I am also using 55volt now instead of 77 because in a square wave as opposed to sinosoidal the rms equals peak voltage now what i want to do is make use of IRF640 mosfets because they switch fast enough for 50hz now im trying to choose a capacitor diode and mybe i need a bootstrap resistor too, any additional thoughts welcomed!
i think 10uf at 100v should do it what do you think about this because I consulted another source but in your pdf document it reccomends 47uf - 68uf what are your thoughts
please, I need a high res image of the picture in image 8 of the pdf because the actual picture is a link in the pdf and my internet connection won't allow me to view the page
so i found this on another thread
"Sorry guys i forgot to tell you that i didnt connect the source of the low side mosfet in to ground ... but i connect it to the negative voltage (-310V)
So the output is alternating current isnt it ?
*see the red circle"
does this mean that i can create the alternating current with just one half bridge ir2110, I want to understand this
