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N-channel MOSFET Safe Operating Area anomaly?

G

Grant

Jan 1, 1970
0
Hi there,

I put up MOSFET SOA charts here: http://grrr.id.au/soa/ for three
devices: FQP33N10, RFP50N06 and IRFP4321PbF.

The third device is odd, a nice big TO247 power package, but lousy
low frequency to DC SOA. Compared to other MOSFETs, this one has
an extra, steep line added to the trace set.

What's the explanation?

Worth trying to see if these really can do better than 1A at 20V?

Why limited to 20W DC when they claim it's a 310W max power device?
150V at 78A (limited to 75A by package, hmm, not as bad as some IR
datasheets).

Thanks,
Grant.
 
T

Tim Williams

Jan 1, 1970
0
Ha, second breakdown. But MOSFETs aren't supposed to exhibit that
phenomenon!

Vgs(th) has a negative tempco, which certainly should be capable of
producing the effect, at least if transconductance and power density are
high enough. Is that one difference between old school vertical DMOS and
typical switching FETs, higher gain?

Tim
 
G

Grant

Jan 1, 1970
0
That slopey part of the DC curve is about a constant 120 watts. Hmmm,
120 is nowhere 310, is it?

I meant the third (bottom) diagram, I see about 20V at 1A there, the
first two are for 'normal' MOSFETs
Lots of fets have a DC curve that slopes down more, in the sense that
max allowed DC power falls as voltage increases. That's why switchmode
type fets can blow up at fairly low power when used in linear mode.

The axis label are annoying. What's wrong with 1 10 100 ?

That's why I think you're commenting on the top chart?

Grant.
 
T

Tim Williams

Jan 1, 1970
0
Robert Baer said:
Did you not know, that SOLELY due to marketing expertise, the IR FETS
can handle ten times the current compared to the wires?

Bob, that's silly.

I could get tremendous amounts of power through wires cooled by the same
liquid bullshit they use :)

Tim
 
H

Hammy

Jan 1, 1970
0
Ha, second breakdown. But MOSFETs aren't supposed to exhibit that
phenomenon!

They can when operated in linear mode.See here.

http://powerelectronics.com/704PET23.pdf
Vgs(th) has a negative tempco, which certainly should be capable of
producing the effect, at least if transconductance and power density are
high enough. Is that one difference between old school vertical DMOS and
typical switching FETs, higher gain?

Tim

IXYS makes FETS desighned for linear operation an explanation of there
L2 FETS is in the above pdf. They arent giving them away cheapest is a
T0220 $6 FROM DIGIKEY. But you would probably want a to-247 or TO-3P
package and they start at $12.

http://search.digikey.com/scripts/DkSearch/dksus.dll
 
H

Hammy

Jan 1, 1970
0
They can when operated in linear mode.See here.

http://powerelectronics.com/704PET23.pdf


IXYS makes FETS desighned for linear operation an explanation of there
L2 FETS is in the above pdf. They arent giving them away cheapest is a
T0220 $6 FROM DIGIKEY. But you would probably want a to-247 or TO-3P
package and they start at $12.

http://search.digikey.com/scripts/DkSearch/dksus.dll

Sorry that digikey search link isnt to helpful. Just search digi for
IXYS fets and use parametric search for L2 mosfets.They start at $6 to
$32.
 
G

Grant

Jan 1, 1970
0
Did you not know, that SOLELY due to marketing expertise, the IR FETS
can handle ten times the current compared to the wires?

Oh, I've seen the discussions here, but I expected a bit more for
a MOSFET in a TO247 pkg!

Grant.
 
J

Jeff Johnson

Jan 1, 1970
0
Grant said:
Hi there,

I put up MOSFET SOA charts here: http://grrr.id.au/soa/ for three
devices: FQP33N10, RFP50N06 and IRFP4321PbF.

The third device is odd, a nice big TO247 power package, but lousy
low frequency to DC SOA. Compared to other MOSFETs, this one has
an extra, steep line added to the trace set.

What's the explanation?

Worth trying to see if these really can do better than 1A at 20V?

Why limited to 20W DC when they claim it's a 310W max power device?
150V at 78A (limited to 75A by package, hmm, not as bad as some IR
datasheets).

The maximum power is the maximum power at "absolute zero" that the package
can dissipate. It is not the expected power dissipation from the package in
standard operating conditions as that depends on too many factors for a
simple number to describe.

It has to do with thermal resistanc calculations and is a sort of ideal
power dissipation(all additional thermal resistances are 0).

Conceptually if you think of heat radiating from the junction to the outside
package it has to move through the device packaging. That packaging has
resistance which "slows down" the transport of heat energy from the
junction. If the termal resistance is very large the junction temperature
will rise to a very large number and of course will burn up.

If you add additional thermal resistances(heat sink, air, etc...) then it
only makes matters worse as the heat energy has more barriers to cross. By
giving a number that is independent of all those extra cases we get a pure
number that depends only on the device package. That number is pretty
consistent across all devices manufactured the same because of quality
control. Now when we want to go calculate the total dissipation in our case
we can do so because the thermal resistances will add as there will not be
any co-dependence between the different thermal cases.

Another way to think about it is that in the ideal case, that is complete
power absorbtion and removal from the device package, then the device
package can dissipate it's maximum power dissipation withthe junction
temperature being it's maximum.

Best to show an example I suppose.

2N7000 -

Maximum power dissipation = 0.4W @ STP
Thermal resistance - 312.5 C/W

(Note there is no junction to case resistance because one generally uses
these without any other thermal resistances. This should make sense as they
realized no thermal calculations would probably be needed since the devices
would almost all be used effectly the same. If you put this is liquid
nitrogen then you might get more power out)

312.5*0.4 = 125C.

This tells us that if we run the device at 0.4W we will get a junction
temperature of 125C, possibly it's maximum which will probably cause it to
burn up. The data sheet suggests that the maximum junction temperature is
150C so it probably will be fine to run at 0.4W.

The total thermal resistance is R_JC + R_CA = R_JA = 312.5C/W.

Hence what they are telling us here is that the maximum power dissipation is
pretty much what it says it to be. This is why many electrical enginners get
confused about power dissipation numbers because they treat them all the
same. In this case it so happens it is the same because they intended it to
be the same. That is, the maximum power dissipation is the maximum operating
power dissipation. If the ambient temperature changed then one could
calculate the new maximum operating power dissipation.

Now for a high power device one generally adds in thermal resistances that
effect the *maximum operating power dissipation*.

Take the IRFZ40 TO-220

Maximum continuous power dissipation @ STP = 140W
Maximum junction temperature = 175C

R_JC = 1C/W

Hence R_JC*140W = 140C

BUT THIS IS THE IDEAL CASE. This assumes that the heat dissipating on the
surface of the case is completely and instantaneously absorbed into the
ambient. If they could get the device into an absolute zero atmosphere then
they could run the device at 140W and it would produce a junction
temperature of 140C.

IN REALITY, we have additional resistances involved. If we do not use a heat
sink then

R_JA = 62.5C/W

and if we ran this at 140W then the unction temperature would be (62.5 +
1)*140W = 8890C!!!!! To make sure the device survives we can only run it at
140C/(62.5 + 1) = 2.2W.

Why is it much less than the idea situation? Because the air cannot draw out
the heat from the case quick enough so the junction temperature will
increase faster. 2.2W will produce a junction temperature of 140C if the
package is in ambient. Probably ambient with no convetion. If you used water
then you would get a different thermal resistance and could run it at a
different power level.

Suppose you needed to run it at 5W, then

140C = 5*(1C/W + X) ==> X = 27

This means you'll need to find something with a thermal resistance of 27 to
get that 5W power dissipation.


As you hopefully realize now, the maximum power dissipation is that which
brings the junction temperature up to it's maximum. It depends on all the
thermal resistances inbetween. By taking the ideal case, that is R_JA = 0,
they can get R_JC. This means you can do computations by simply adding the
thermal resistances.

In the 2N7000 they didn't need to an ideal case since the device was meant
to be used only in ambient air. For power devices one is meant to use a heat
sink and that adds an extra dimension. This requires a calculation and
without R_JC one cannot do it.

Ask yourself, what is the "maximum power dissipation of a device"? Can you
answer that? The answer is no. To many factors involved. Unfortunately in
the devices that are ment to run ambient they generally mean "maximum
operating power at STP an in ambient" and in power devices they mean
"maximum power dissipation at absolute zero". Hence the confusion when they
are using the same term with two different definitions.

In fact I don't even know why they need to give the maximum power
dissipation for powe devices at all since you never will use it in thermal
calculations. Of course They must give you either the ideal maximum power
dissipation or the maximum junction temperature and they will be related by
T = R_JC*P.

What you can do is know that if two devices or two different packages have
two different power ratings that the largest one will let you run it
"hotter". The difference between a 100W BJT and a 200W BJT effectively means
that the 200W BJT's package has 1/2 the thermal resistance than the 100W
BJT. This doesn't mean too much as your total thermal resistance will be
much larger than that of the package. That is, in your calculations you'll
have stuff like "small number + larger number" ~= large number. The small
number is R_JC. If you start using very efficient heat sink's and other
advanced cooling methods then it might start mattering.

If you look at most power devices in TO-220 their R_JA is approximately
60C/W. This is because the thermal resistance of air is much greater than
that of the case. R_JA = R_JC + R_CA ~= R_CA != 60C/W. it depends on the
surface area of the package so it can change significantly with the package
shape. This means most power devices can dissipate around 2W in air without
additional heat sinking.
 
G

Grant

Jan 1, 1970
0
Oh, OK... missed the other two graphs. That 3rd graph probably
illustrates my point about voltage. The IRFP4321 can dissipate 300
watts at 3 volts, but only 20 watts at 20 volts. There's some
equivalent to bipolar 2nd breakdown at higher voltages. This is an
extreme case... looks like 5 watts at 50 volts!

I avoid IR fets in general.

We tested a bunch of 300 to 500 watt fets to destruction to find some
that would survive 300 watts at high voltage for 100 milliseconds.

ftp://jjlarkin.lmi.net/ExFets.jpg

Hmm, I could see how one on it's own goes discharging "20 x 10000/50
plus 60 x 4700/50" capacitor bank? Only 50V there, for a short time!

http://grrr.id.au/splat/capbank.jpg

Another project on the backburner...

Grant.
 
T

Tim Williams

Jan 1, 1970
0
The maximum power is the maximum power at "absolute zero" that the
package
can dissipate.

Absolute zero[1]? The datasheet states Tc = 25C. They enforce that quite
literally and stringently, making the *entire exposed surface of the case*
held to exactly 25C. At any rate, they provide the corresponding thermal
resistance.

What the OP is talking about is an apparent reduction in power dissipation
at high voltages, shown on the SOA. This is nothing you can fix at the
case level, it's an internal thing.

One reply stated a curve as low as 20W. I trust even the smallest power
devices (e.g., DPAK, assuming suitable attachment) to handle that much,
let alone a TO-247. This goes well beyond simple heatsinking -- besides,
the most a manufacturer ever specifies in terms of heatsinking is "greased
heatsink thermal resistance".

[1] Curiously, lots of diodes, resistors and other devices have a flat
power, current or voltage limit up to a limiting temperature. GBPC35xx
rectifiers are 35A up to 65C, derating linearly to 175C or so. I don't
think I've seen this type of rating on transistors, though, so there may
be additional power dissipation available from, say, a liquid nitrogen
cooled heatsink. Assuming you don't cool it so far the silicon stops
working (which specifically precludes "absolute zero").

Tim
 
D

Don Klipstein

Jan 1, 1970
0
The maximum power is the maximum power at "absolute zero" that the package
can dissipate. It is not the expected power dissipation from the package in
standard operating conditions as that depends on too many factors for a
simple number to describe.

The temperature used for this is by industry standard 25 C. The device
can safely dissipate "full power" if every square micrometer of its surface
is cooled to 25 C. If seconary breakdown is avoided, that is.

If the device has a heatsinkable surface, cooling every square milimeter
of that to 25 C is supposed to be good enough for the device to get away
with dissipating full power.

Maximum current of some power MOSFETs is another story. I remember a
small number of parts mentioned before in S.E.D. having current ratings
that their leads appear to me to have trouble handling, unless slightly
unconventional connection means are used. Such as maybe beefing up the
leads with copper soldered-on externally, with close fit to avoid problems
of solder having higher resistivity than copper. Or soldering the ends of
rectangular copper "wires" to top and bottom surfaces of the leads.
It has to do with thermal resistanc calculations and is a sort of ideal
power dissipation (all additional thermal resistances are 0).

Conceptually if you think of heat radiating from the junction to the outside
package it has to move through the device packaging. That packaging has
resistance which "slows down" the transport of heat energy from the
junction. If the termal resistance is very large the junction temperature
will rise to a very large number and of course will burn up.

Rtheta(jc), thermal resistance from junction to case in degrees C per
watt.
If you add additional thermal resistances(heat sink, air, etc...) then it
only makes matters worse as the heat energy has more barriers to cross.

Rtheta of any heatsinking compound and insulators, plus Rtheta of te
heatsink itself (normally including that of the air around it). These are
thermal resistances in degrees C per watt.
By giving a number that is independent of all those extra cases we get a
pure number that depends only on the device package. That number is pretty
consistent across all devices manufactured the same because of quality
control. Now when we want to go calculate the total dissipation in our case
we can do so because the thermal resistances will add as there will not be
any co-dependence between the different thermal cases.

Another way to think about it is that in the ideal case, that is complete
power absorbtion and removal from the device package, then the device
package can dissipate it's maximum power dissipation with the junction
temperature being it's maximum.

In other words, a transistor can take full power if it's in Niagara Falls
and the water temperature is not exceeding 25 C.

Take the IRFZ40 TO-220

Maximum continuous power dissipation @ STP = 140W
Maximum junction temperature = 175C

Whoa! That's hot!

I have heard of silicon taking that and even 200 C, but for what life
expectancy? 10,000 or 1,000 hours?

Wanna run silicon conservatively, especially in plastic packages, I
feel better with 125 C.
R_JC = 1C/W

Hence R_JC*140W = 140C

So, the device should be able to "get away with" 140W when the
heatsinkable surface of the device is cooled to (175-140) degrees C, which
is 35 C. For "a little margin of safety" they probably say 140W when
cooled to 25 C.
BUT THIS IS THE IDEAL CASE. This assumes that the heat dissipating on the
surface of the case is completely and instantaneously absorbed into the
ambient. If they could get the device into an absolute zero atmosphere then
they could run the device at 140W and it would produce a junction
temperature of 140C.

Absolute zero is not zero C. To the nearest degree C, absolute zero is
-273 C.

BUT, I find heatsinks tend to get warm to the touch - meaning usually
exceeding 35 C. Often, when they are of sizes used to make products
reasonably compact, they get fairly warm - 45 C.

One designing a product with a heatsinkable device and a heatsink should
know the thermal resistance of the heatsink (including the air around it),
plus that of anything between the device and the heatsink (thermal
compound joint and any insulator).

Otherwise, figure that the heatsinkable surface of the device often gets
to 50 C even without an insulator. (If you use one, know its thermal
resistance.)

That is in 25 C ambient. But somebody is likely to use your product in
outdoor air or in an unairconditioned building in midafternoon of a
minimally-hotter-than-average early July day in Phoenix AZ, when the air
temperature is 45 C - 20 degrees hotter than 25 C. So, unless you know
good cause to depend on a more favorable temperature (such as on basis of
known thermal resistance of heatsink, etc. and power dissipation and your
worst case air temperature saying better), I would expect that the
heatsinkable surface of the device could go as high as 70 C if the heatsink
"normally feels only warm to the touch").

Heatsinkable surface of the device may go as high as 70, and for
"conservative operation" I like the junction to not get past 125 C. That
means 55 C between junction and heatsinkable surface. In the above
example with Rtheta(jc) being 1 degree C per watt, this means 55 watts is
the most that I am usually comfortable dissipating into a 140W plastic
case device in products that get operated in large numbers away from my
supervision. A little more is allowable if the heatsink is so big that
its thermal resistance (including that of the air around it) is so small
(and known) that more power will not push the junction temp. past 125 C in
a 45 C ambient. Or if your product will only be operated in more
reasonable ambient temperatures, such as if it is a personal project.
IN REALITY, we have additional resistances involved. If we do not use a heat
sink then

R_JA = 62.5C/W

and if we ran this at 140W then the unction temperature would be (62.5 +
1)*140W = 8890C!!!!! To make sure the device survives we can only run it at
140C/(62.5 + 1) = 2.2W.

Where did that +1 come from? R_JA is thermal resistance from junction
to ambient, not from case to ambient. Do not add to this the
junction-to-case thermal resistance.

2.24W is max without a heatsink pushing the limits in a 35 C ambient.

I would be afraid that the 62.5 degree C per watt Rtheta(JA) may assume
some typical soldering onto some typical length, width and thickness of
PCB traces on a PCB that is in free air rather than air stagnated by a
small enclosure around the PCB.

Suppose you needed to run it at 5W, then

140C = 5*(1C/W + X) ==> X = 27

This means you'll need to find something with a thermal resistance of 27 to
get that 5W power dissipation.

But what if the air easily reaches 35 C and I want the junction to not
exceed 125 C so that reliability is improved? That means 5 watts through
a temperature difference of 90 C from junction to ambient.

Thermal resistance then is 18 degrees C per watt. Subtract from that
the 1 degree C per watt R_JC of the device, and that leaves 17 degrees C
per watt for the heatsink (which normally includes that of the air around
it), any heatsink insulator and/or thermal compound, and any enclosure
around the heatsink including any air inside the enclosure made more
stagnant by the enclosure than it would be without the enclosure.

Make that 15 instead of 17 if the device is going to be used by any old
Joe where the air temperature may hit 45 C rather than 35.

<SNIP from here on basis of probably enough being said.>
 
G

Grant

Jan 1, 1970
0
The maximum power is the maximum power at "absolute zero" that the
package
can dissipate.

Absolute zero[1]? The datasheet states Tc = 25C. They enforce that quite
literally and stringently, making the *entire exposed surface of the case*
held to exactly 25C. At any rate, they provide the corresponding thermal
resistance.

What the OP is talking about is an apparent reduction in power dissipation
at high voltages, shown on the SOA. This is nothing you can fix at the
case level, it's an internal thing.

One reply stated a curve as low as 20W.

OP stated that ;)

I resized the charts on:

http://grrr.id.au/soa/

My impression is people look at the top chart, rather than the IR MOSFET
SOA curves in the bottom chart.
I trust even the smallest power
devices (e.g., DPAK, assuming suitable attachment) to handle that much,
let alone a TO-247. This goes well beyond simple heatsinking -- besides,
the most a manufacturer ever specifies in terms of heatsinking is "greased
heatsink thermal resistance".

That's my point, I've got little I-Pak MOSFETs claiming they'll handle
50 or 60W at or near DC, yet this IR beastie claims 310W peak power,
but can only let an amp through at 20V D-S? The other device SOA curves
are there as the control, these are what 'normal' MOSFETs look like.

The IR MOSFET has some dismal effect that implies that huge TO-247
package is wasted on near DC operation.

Thanks,
Grant.
[1] Curiously, lots of diodes, resistors and other devices have a flat
power, current or voltage limit up to a limiting temperature. GBPC35xx
rectifiers are 35A up to 65C, derating linearly to 175C or so. I don't
think I've seen this type of rating on transistors, though, so there may
be additional power dissipation available from, say, a liquid nitrogen
cooled heatsink. Assuming you don't cool it so far the silicon stops
working (which specifically precludes "absolute zero").

Well the odd things here is there knee turning southeastsouth
below about 35A.

Normal MOSFETs have the lines going southeast or eastsoutheast
without the knee this IR beastie has in its SOA chart.

Grant.
 
T

Tim Williams

Jan 1, 1970
0
Grant said:
That's my point, I've got little I-Pak MOSFETs claiming they'll handle
50 or 60W at or near DC, yet this IR beastie claims 310W peak power,
but can only let an amp through at 20V D-S? The other device SOA curves
are there as the control, these are what 'normal' MOSFETs look like.

Maybe you should use IGBTs?
http://www.fairchildsemi.com/ds/FG/FGH80N60FD2.pdf
I don't think I've seen 2nd breakdown in any of them. A lot of the time,
they don't even provide the DC/pulsed curves -- just some crazy, almost
square, unlabeled thing.

If you test them without safety glasses, you might be able to win some
money *and* teach them to write better datasheets! ;-)

Tim
 
H

Hammy

Jan 1, 1970
0
Well the odd things here is there knee turning southeastsouth
below about 35A.

Normal MOSFETs have the lines going southeast or eastsoutheast
without the knee this IR beastie has in its SOA chart.

Grant.

The curves are probably more realistic for DC operation then the
others actually.

When a switching mosfet is subject to high voltage it can only
withstand a small amount of current it is all explained pretty well in
the PDF I linked too. John L also said similiar to me in my thread
about "MOSFETS ON THE SAME HEATSINK".

IXYS is the only manufacturer I know of that actually test their FETS
for linear operation others use theoretical calculation based on ideal
heat distrubution in the package which it is'nt.

For the record Tim if you ever get 20W dissapation out of a D2PAK let
me know how you do it the most I've used them to is 2W or so other
then that the area of copper 2oz starts to get ridicolous and you
might as well use a TH package and a heatsink.
 
H

Hammy

Jan 1, 1970
0
The curves are probably more realistic for DC operation then the
others actually.

When a switching mosfet is subject to high voltage it can only
withstand a small amount of current it is all explained pretty well in
the PDF I linked too. John L also said similiar to me in my thread
about "MOSFETS ON THE SAME HEATSINK".

IXYS is the only manufacturer I know of that actually test their FETS
for linear operation others use theoretical calculation based on ideal
heat distrubution in the package which it is'nt.

Sorry they state that they test their L2 mosfets for linear operation
I dont know if this applies to typical switching fets or not.
 
H

Hammy

Jan 1, 1970
0
Maybe you should use IGBTs?
http://www.fairchildsemi.com/ds/FG/FGH80N60FD2.pdf
I don't think I've seen 2nd breakdown in any of them. A lot of the time,
they don't even provide the DC/pulsed curves -- just some crazy, almost
square, unlabeled thing.

If you test them without safety glasses, you might be able to win some
money *and* teach them to write better datasheets! ;-)

Tim
Maybe not.

[1] "IGBT modules may only touch the linear characteristic area with
approximately VCE > 20 V or VGE < 9 V during switching operation.
Analogous operation over a longer period of time is not permitted,
since asymmetries due to variation among the chips as
well as negative temperature coefficients of the threshold voltages
might cause thermal instability"

[2] "Operation as a linear amplifier. Linear operation exercises the
SOA of the IGBT in a combination of the two modes
described above. No detailed characterization of IGBTs as linear
amplifiers has been carried out by IR, given the limited use
of IGBTs in this type of application."

[1]
http://www.semikron.com/skcompub/en/SID-FEB6ECF9-7554810B/eng_2_3_3.pdf

[2] http://www.irf.com/technical-info/appnotes/an-983.pdf
 
G

Grant

Jan 1, 1970
0
Maybe you should use IGBTs?
http://www.fairchildsemi.com/ds/FG/FGH80N60FD2.pdf
I don't think I've seen 2nd breakdown in any of them. A lot of the time,
they don't even provide the DC/pulsed curves -- just some crazy, almost
square, unlabeled thing.

Oh no, I've already started building resistor banks to work with
saturated MOSFETs -- no heatsinks on the FETs, but a 120mm fan to
cool the resistors instead ;)

I bought 23 of these FETs cheap, 50c each, a while back. Their one
off price is $13.28 today:

http://goo.gl/hsFW local Farnell
If you test them without safety glasses, you might be able to win some
money *and* teach them to write better datasheets! ;-)

No thanks ;^) I acquired enough various injuries over the years
without risking my sight.

Grant.
 
G

Grant

Jan 1, 1970
0
Maybe you should use IGBTs?
http://www.fairchildsemi.com/ds/FG/FGH80N60FD2.pdf
I don't think I've seen 2nd breakdown in any of them. A lot of the time,
they don't even provide the DC/pulsed curves -- just some crazy, almost
square, unlabeled thing.

If you test them without safety glasses, you might be able to win some
money *and* teach them to write better datasheets! ;-)

Tim
Maybe not.

[1] "IGBT modules may only touch the linear characteristic area with
approximately VCE > 20 V or VGE < 9 V during switching operation.
Analogous operation over a longer period of time is not permitted,
since asymmetries due to variation among the chips as
well as negative temperature coefficients of the threshold voltages
might cause thermal instability"

[2] "Operation as a linear amplifier. Linear operation exercises the
SOA of the IGBT in a combination of the two modes
described above. No detailed characterization of IGBTs as linear
amplifiers has been carried out by IR, given the limited use
of IGBTs in this type of application."

[1]
http://www.semikron.com/skcompub/en/SID-FEB6ECF9-7554810B/eng_2_3_3.pdf

[2] http://www.irf.com/technical-info/appnotes/an-983.pdf

Besides, every time I looked at a datasheet for IGBT, they're too
big, too expensive, or MOSFETs seem a better fit for what I was
planning.

Grant.
 
G

Grant

Jan 1, 1970
0
The curves are probably more realistic for DC operation then the
others actually.

When a switching mosfet is subject to high voltage it can only
withstand a small amount of current it is all explained pretty well in
the PDF I linked too. John L also said similiar to me in my thread
about "MOSFETS ON THE SAME HEATSINK".

Sure, and I agree with you. In fact the best linear loading
solution seems to be using a bank of 7805s or LM317s ;) Cheap,
and built in thermal protection. I got some LM317AHVs that I
want to try in a bench supply soon (everything soon).

Grant.
 
H

Hammy

Jan 1, 1970
0
Sure, and I agree with you. In fact the best linear loading
solution seems to be using a bank of 7805s or LM317s ;) Cheap,
and built in thermal protection. I got some LM317AHVs that I
want to try in a bench supply soon (everything soon).

Grant.
I think FETS are the best for that purpose. You just have to do what
you always have to do derate. Namely stay in the middle of the SOA.

If your willing to shell out the bucks for IXYS's L2 fets they are at
least tested and designed for linear operation. I'm like you I got my
fets at about a buck a pop so that's what I'm using 6 of.

I plan on limiting it to 250Vdc in; 300W power limiting. They should
be able to handle that if not I guess I'll find out. I have lots.

It's a slow process I have other things on the go but I finished the
power supply for the control board hopefully next week I can start
assembly. I'll post pics of my success or failure.;-)
 
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