P
PZ
- Jan 1, 1970
- 0
One question,
"An n-type sample of silicon has a uniform density Nd= 10(power 16)
atomes cm(-3) of arsenic. Find out the temperature at which half the
impurity atoms are ionized. Assume that all mobile electrons and holes
come from dopant impurities".
don't understand the question at all. If assume all electrons come from
dopant, that means I should I consider the intrinsic carrier? So, as
temp goes up, some dopant get ionized, half which is 0.5 X 10(power 16)
is the current. if intrinsic is not allowed to consider, can I still
use p = Ni(power 2) / n to find p?
thanks, I guess I don't get the meaning of this question. Any comments
is appreicated.
"An n-type sample of silicon has a uniform density Nd= 10(power 16)
atomes cm(-3) of arsenic. Find out the temperature at which half the
impurity atoms are ionized. Assume that all mobile electrons and holes
come from dopant impurities".
don't understand the question at all. If assume all electrons come from
dopant, that means I should I consider the intrinsic carrier? So, as
temp goes up, some dopant get ionized, half which is 0.5 X 10(power 16)
is the current. if intrinsic is not allowed to consider, can I still
use p = Ni(power 2) / n to find p?
thanks, I guess I don't get the meaning of this question. Any comments
is appreicated.