J
Jon Slaughter
- Jan 1, 1970
- 0
Is it possible to drive the gate of a high side n-ch mosfet using an
optocoupler to isolate and float the gate w.r.t to the source and still be
effective?
I want to continuously control the gate of a high side n-ch mosfet to prove
a variable resistance for a high voltage load.
G = Gate, S = Source, D = Drain
OE = Opto Emitter, OC = Opto Collector
Vcc--D
OC--R2--D
OE--G
G--R1--S
|
Load
|
Gnd
The idea is simple, a resistor(R1) connects the gate to the source. When no
current is flowing the gate is then held at the same voltage as the source
and the mosfet is turned off.
An optocoupler is added to control current through that gate/source resistor
which will "bias" the gate relative to the source and allow turning on the
mosfet. A simple simulation shows this works but I'm not use how useful it
is. Some protection mechanism for the opto would be needed as well as
driving the gate too high.
The isolation is necessary because of the high voltage used. I'm not worried
about the "speed" as this isn't used for switching.
optocoupler to isolate and float the gate w.r.t to the source and still be
effective?
I want to continuously control the gate of a high side n-ch mosfet to prove
a variable resistance for a high voltage load.
G = Gate, S = Source, D = Drain
OE = Opto Emitter, OC = Opto Collector
Vcc--D
OC--R2--D
OE--G
G--R1--S
|
Load
|
Gnd
The idea is simple, a resistor(R1) connects the gate to the source. When no
current is flowing the gate is then held at the same voltage as the source
and the mosfet is turned off.
An optocoupler is added to control current through that gate/source resistor
which will "bias" the gate relative to the source and allow turning on the
mosfet. A simple simulation shows this works but I'm not use how useful it
is. Some protection mechanism for the opto would be needed as well as
driving the gate too high.
The isolation is necessary because of the high voltage used. I'm not worried
about the "speed" as this isn't used for switching.