question : find intrinsic carrier concentration at T=200k for silicon (in cm^-3).
Answer is attached.In that why is that (200/300)^3 is added there.my only hope is this forum.Thank you
question : find intrinsic carrier concentration at T=200k for silicon (in cm^-3).
Answer is attached.In that why is that (200/300)^3 is added there.my only hope is this forum.Thank you
question : find intrinsic carrier concentration at T=200k for silicon (in cm^-3).
Answer is attached.In that why is that (200/300)^3 is added there.my only hope is this forum.Thank you
Nc and Nv have temperature parameters that are raised to the 3/2 power. If the temperature ratios are moved outside the exponent brackets, then the temperature ratios have to be raised to the third power to compensate for the move.
Nc and Nv have temperature parameters that are raised to the 3/2 power. If the temperature ratios are moved outside the exponent brackets, then the temperature ratios have to be raised to the third power to compensate for the move.
Nv and Nc have their temperature parameters inside a term raised to the 3/2 power. You don't need to take those temperatures outside the radical, but if you do, you have to compensate for their removal. The solution seems to have elected to move the temperature parameter to the outside the radical. Therefore, the temperature term has to be raised to the third power to compensate for the movement.
What book are you using? Doesn't it have the formula shown in the attachment? When Nv and Nc are multiplied together, the "2" in the denominator is cancelled and "3" remains.