How do I replace D2 in this answer with a P-MOS FET ? I am thinking about this diagram:
The two D1 symbols are just one bidirectional TVS diode (missing symbol in circuitlab) with Vcl_max = 24.4V and M1 has Vgs_th = -4V Vgs_max = -20V. Vds_max - should I worry about it ? Will this protect fine against -220V reverse voltage spikes (and +150V spikes) of the http://www.sft-lab.com.cn/uploads/ISO 7637-2-2011.pdf kind ?
Someone suggested this diagram instead:
Mine is simpler and I still do not know if the second diagram is really warranted. A few questions:
1. Is that ES3J really needed or is the -24.4V from TVS not enough to cause any damage ? Why is there no limiting resistor on that branch, does the MOV work as one ?
2. Is the GS junction protection (Zener + 10k resistor) really needed, will the source pin ever get so much higher above gate pin ?
3. If GS protection is really needed, then can the ES1J be eliminated if the Zener limiting resistor was made 100 - 1k ohm ?
Thank you

The two D1 symbols are just one bidirectional TVS diode (missing symbol in circuitlab) with Vcl_max = 24.4V and M1 has Vgs_th = -4V Vgs_max = -20V. Vds_max - should I worry about it ? Will this protect fine against -220V reverse voltage spikes (and +150V spikes) of the http://www.sft-lab.com.cn/uploads/ISO 7637-2-2011.pdf kind ?
Someone suggested this diagram instead:

Mine is simpler and I still do not know if the second diagram is really warranted. A few questions:
1. Is that ES3J really needed or is the -24.4V from TVS not enough to cause any damage ? Why is there no limiting resistor on that branch, does the MOV work as one ?
2. Is the GS junction protection (Zener + 10k resistor) really needed, will the source pin ever get so much higher above gate pin ?
3. If GS protection is really needed, then can the ES1J be eliminated if the Zener limiting resistor was made 100 - 1k ohm ?
Thank you