flippineck
- Sep 8, 2013
- 358
- Joined
- Sep 8, 2013
- Messages
- 358
So.. I think I have some kind of understanding but it's probably very flawed..
As the current rises, the base potential of Q2 rises. At a certain point the rising potential at Q2's base causes sufficient base-emitter current to flow, to switch Q2 toward conduction. When this happens, the gate-source potential at Q1 drops or even might go slightly negative. This increases the drain-source resistance of Q1 or even switches it off entirely, lowering the current.
So the mosfet requires a gate-source potential applied to switch the device “on”.. so does this mean I need to select an enhancement mode n-channel mosfet rather than a depletion type?
Just thinking about that diode, does it just leak anything above 10V away from the gate ("it doesn't need any more help to turn on") and otherwise doesn't affect operation; it doesn't mean that the circuit will cut the flow of current altogether if the gate starts to experience more than 10V coming from the panels? I think I see now that the 10k resistor would not be a bar to a high potential reaching the gate.
I'm still finding it hard to understand about the ten 2R2 resistors - I'm assuming these are all in parallel - particularly why there is a constant voltage across them, and how they all always end up dissipating the same power despite chopping some out or adding some in.
Any opportunity to correct my thinking please be my guest! I'm going to wait till I fully understand it before I select parts and try to build it.
Very big thanks for this circuit, although I'm having trouble fully 'getting it', I'm enjoying trying ;-)
As the current rises, the base potential of Q2 rises. At a certain point the rising potential at Q2's base causes sufficient base-emitter current to flow, to switch Q2 toward conduction. When this happens, the gate-source potential at Q1 drops or even might go slightly negative. This increases the drain-source resistance of Q1 or even switches it off entirely, lowering the current.
So the mosfet requires a gate-source potential applied to switch the device “on”.. so does this mean I need to select an enhancement mode n-channel mosfet rather than a depletion type?
Just thinking about that diode, does it just leak anything above 10V away from the gate ("it doesn't need any more help to turn on") and otherwise doesn't affect operation; it doesn't mean that the circuit will cut the flow of current altogether if the gate starts to experience more than 10V coming from the panels? I think I see now that the 10k resistor would not be a bar to a high potential reaching the gate.
I'm still finding it hard to understand about the ten 2R2 resistors - I'm assuming these are all in parallel - particularly why there is a constant voltage across them, and how they all always end up dissipating the same power despite chopping some out or adding some in.
Any opportunity to correct my thinking please be my guest! I'm going to wait till I fully understand it before I select parts and try to build it.
Very big thanks for this circuit, although I'm having trouble fully 'getting it', I'm enjoying trying ;-)
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